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2SK1058
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  • 2SK1058
  • 2SK1058
  • 2SK1058

2SK1058

17,85 $
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Archivo PDF Caracteristicas Electricas
BAJAR PDF. 7A/160V/1U
Features
  • Silicon N Channel MOS FET
  • Features
  • Good frequency characteristic
  • High speed switching
  • Wide area of safe operation
  • Enhancement-mode
  • Good complementary characteristic
  • Equipped with gate protection diodes
  • Suitable foe audio power amplifier
  • Features
  • Low drain-source ON resistance : RDS (ON)= 3.0 Ohms (typ.)
  • High forward transfer admittance : Yfs = 2.0 S (typ.)
  • Low leakage current : IDSS= 300uA (max) (VDS=800 V)
  • Enhancement mode : Vth = 1.5 to 3.5 V (VDS=10 V, ID
Aplicaciones
  • Applications
  • Low frequency power amplifier
  • Complementary pair with 2SJ160, 2SJ161 and 2SJ162
2SK1058
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