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IRFB4229
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  • IRFB4229

IRFB4229

10,71 $
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Archivo PDF Caracteristicas Electricas
BAJAR PDF. 33A/30V/1U
Features
  • HEXFET Power MOSFET
  • Features
  • Advanced process Technologt
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low Epulse Rating to Reduce Power Dissipation in PDP Sustain, Energy recovery and Pass Switch Applications
  • Low QG for Fast Responce
  • High Repetitive Peak Current Capability for Reliable Operation
  • Short Fall & Rise Times for Fast Switching
  • 175 C Operating Juntion Temperature for Improved Ruggedness
  • Repetitive Avalanche Capability for Robustness and Reliability
  • Class-D Audio Amplifier 300W-500W (Half-bridge)
Aplicaciones
IRFB4229
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