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IRG4BC30UD

10,71 $
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Archivo PDF Caracteristicas Electricas
BAJAR PDF. 12A/600V/1U
Features
  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • Features
  • Fast Optimized for medium operating
  • frequencies ( 1 - 5 kHz in hard switching, >20
  • kHz in resonant mode)
  • Generation 4 IGBT design provides tighter
  • parameter distribution and higher efficiency than Generation 3
  • IGBT co-package with HEXFRED ultrafast, ultra
  • -soft, recovery anti-parallel diodes for use in
  • bridge configurations
  • Industry standar TO-220AB package
  • Lead-Free
Aplicaciones
IRG4BC30UD
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