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IRG4PF50WDPBF

1,79 $
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Archivo PDF Caracteristicas Electricas
BAJAR PDF. 28A/900V/1U
Features
  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • Features
  • Optimized for use in Welding and Switch-Mode
  • Power Supply applications
  • Industry benchmark switching losses improve
  • efficiency of all power supplies topologies
  • 50% reduction of Eoff parameter
  • Low IGBT conduction losses
  • Lastest technology IGBT design offers tighter
  • parameter distribution coupled with
  • exceptional reliability
  • IGBT co-packaged with HEXFRED ultrafast,
  • ultra-soft-recovery anti-parallel diodes for use
  • in bridge configurations
  • Industry standar TO-247AC package
  • Leads-Free
Aplicaciones
IRG4PF50WDPBF
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