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2SK1119
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  • 2SK1119

2SK1119

10,71 $
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Archivo PDF Caracteristicas Electricas
BAJAR PDF. 4A/1000V/1U
Features
  • Silicon N Channel MOS FET
  • Features
  • Low drain-source ON resistance : RDS (ON)= 3.0 Ohms (typ.)
  • High forward transfer admittance : Yfs = 2.0 S (typ.)
  • Low leakage current : IDSS= 300uA (max) (VDS=800 V)
  • Enhancement mode : Vth = 1.5 to 3.5 V (VDS=10 V, ID= 1 mA)
Aplicaciones
2SK1119
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