Features | - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
- Features
- Optimized for use in Welding and Switch-Mode
- Power Supply applications
- Industry benchmark switching losses improve
- efficiency of all power supplies topologies
- 50% reduction of Eoff parameter
- Low IGBT conduction losses
- Lastest technology IGBT design offers tighter
- parameter distribution coupled with
- exceptional reliability
- IGBT co-packaged with HEXFRED ultrafast,
- ultra-soft-recovery anti-parallel diodes for use
- in bridge configurations
- Industry standar TO-247AC package
- Leads-Free
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