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MIG20J503H

53,55 $
IGBT - IPM
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Archivo PDF Caracteristicas Electricas
BAJAR PDF. 20A/500V/6U
Features
  • INTELLIGENT POWER MODULE
  • Features
  • The 4th generation trench gate thin wafer
  • NPT IGBT is adopted
  • FRD is built in
  • The level shift circuit by high voltage IC is
  • built in
  • The simplification of a high side driver power
  • is possible by the bootstrap system
  • Short circuit protection and over temperature
  • protection and the power supply under voltage
  • protection function are built in
  • Short circuit protection and over temperature
  • protection state are outputted
  • The lower arm emitter terminal has been
  • independent by each phase for the purpose of
  • the current detection at time of vector control
  • Low thermal resistance by adoption of original
  • high thermal conduction resin
  • Since this product is MOS structure, it should be
  • careful of static electricity i the case of handling
Aplicaciones
MIG20J503H
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