• Fuera de stock
irg4pc50fd
search
  • irg4pc50fd
  • irg4pc50fd

IRG4PC50FD

7,14 $
GATE BIPOLAR TRANSISTOR WITH ULTRAFAST RECOVERY DIODE
Quantity
Fuera de stock

  Security policy

(edit with the Customer Reassurance module)

  Delivery policy

(edit with the Customer Reassurance module)

  Return policy

(edit with the Customer Reassurance module)

Archivo PDF Caracteristicas Electricas
BAJAR PDF. 70A/600V/1U
Features
  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • Features
  • Fast Optimized for medium operating
  • frequencies ( 1 - 5 kHz in hard switching, >20
  • kHz in resonant mode)
  • Generation 4 IGBT design provides tighter
  • parameter distribution and higher efficiency
  • than Generation 3
  • IGBT co-packaged with HEXFRED ultrafast,
  • ultra-soft-recovery anti-parallel diodes for use
  • in bridge configurations
  • Industry standar TO-247AC package
Aplicaciones
IRG4PC50FD
Comments (0)
No customer reviews for the moment.