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2sj412
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2SJ412

7,14 $
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Archivo PDF Caracteristicas Electricas
BAJAR PDF. 16A/100V/1U
Features
  • Silicon P Channel MOS Type
  • Features
  • 4-V gate drive
  • Low drain-source ON resistance: RDS(ON)=0.15 Ohms (typ.)
  • High forward transfer admittance : Yfs =7.7 S (typ.)
  • Low leakage current : IDSS=-100 uA (max) (VDS=100V)
  • Enhancement mode : Vth= -8 to -2.0 V (VDS= -10 V, ID= -1 mA)
Aplicaciones
2SJ412
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