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AQY212EH

7,14 $
GU-E PHOTO MOS TRANSISTOR (TRANSITOR MOSFET)
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Archivo PDF Caracteristicas Electricas
BAJAR PDF. 0.55A/60V/1U
Features
  • GU-EPhotoMOS
  • Features
  • 1. Reinforced insulation 5,000 V type
  • More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation).
  • 2. Compact 4-pin DIP size The device comes in a compact (W)6.4x(L)4.78x(H)3.2mm, 4-pin DIP size
  • 3. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
  • 4. High sensitivity, low ON resistance Can control a maximun 0.13 A load current with a 5 mA input current.Low ON resistance of 25 Ohms (AQYEH) Stable operation because there are no metallic contac parts.
  • 5. Low-level off state leakage current
  • The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has typ. 100 pA even with the rated load voltage of 350 V (AQY210EH).
Aplicaciones
  • Applications
  • Modem
  • Telephone equipment
  • Security equipment
  • Sensors
AQY212EH
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