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IRG4PC50FD

$7.14
GATE BIPOLAR TRANSISTOR WITH ULTRAFAST RECOVERY DIODE
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Agotado

 

Política de seguridad

 

Política de entrega

 

Términos y condiciones

Archivo PDF Caracteristicas Electricas
BAJAR PDF. 70A/600V/1U
Features
  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
  • Features
  • Fast Optimized for medium operating
  • frequencies ( 1 - 5 kHz in hard switching, >20
  • kHz in resonant mode)
  • Generation 4 IGBT design provides tighter
  • parameter distribution and higher efficiency
  • than Generation 3
  • IGBT co-packaged with HEXFRED ultrafast,
  • ultra-soft-recovery anti-parallel diodes for use
  • in bridge configurations
  • Industry standar TO-247AC package
Aplicaciones
IRG4PC50FD
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