Features | - INTELLIGENT POWER MODULE
- Features
- The 4th generation trench gate thin wafer
- NPT IGBT is adopted
- FRD is built in
- The level shift circuit by high-voltage IC
- built in
- The simplification of a high side driver power
- supply is possible by the bootstrap system
- Short Circuit Protection, Over Temperature
- protection and the Power Supply Under Voltage
- Protection function are built in
- Short Circuit protection and Over Temperature
- Protection state are outputted
- The lower arm emitter terminal has been
- independent by each phase for the purpose of
- the current detection at the time of vector control
- Low thermal resistance by adoption of original
- high thermal conduction resin
- Since this product is MOS structure, it should be
- careful of static electricity in the case of handling
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